PART |
Description |
Maker |
GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS |
225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM 250MHz 6ns 2M x 18 36Mb sync NBT SRAM 133MHz 11ns 2M x 18 36Mb sync NBT SRAM 166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM 150MHz 10ns 2M x 18 36Mb sync NBT SRAM 200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM 166MHz 7ns 2M x 18 36Mb sync NBT SRAM 133MHz 11ns 1M x 36 36Mb sync NBT SRAM 150MHz 10ns 1M x 36 36Mb sync NBT SRAM 166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM 200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM 225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM 250MHz 6ns 1M x 36 36Mb sync NBT SRAM
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GSI Technology
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CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
CY7C1484V25-167AXC CY7C1484V25-250BZC CY7C1484V25- |
72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM 4M X 18 CACHE SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM 2M X 36 CACHE SRAM, 3.4 ns, PQFP100 72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM 2M X 36 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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AS7C33512PFD18A AS7C33512PFD18AV.1.3 AS7C33512PFD1 |
Sync SRAM - 3.3V From old datasheet system 3.3V 512K x 18 pipeline burst synchronous SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
AS7C251MPFS18A AS7C251MPFS18A-166TQIN AS7C251MPFS1 |
2.5V 1M x 18 pipelined burst synchronous SRAM Sync SRAM - 2.5V
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation]
|
GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs 8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛? 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100 512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100 8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器)) 8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位(512K x 18位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology, Inc.
|
CY7C09579V-100AC CY7C09579V-67AC CY7C09579V-83AC C |
SYNC SRAM|32KX36|CMOS|QFP|144PIN|PLASTIC SYNC SRAM|16KX36|CMOS|QFP|144PIN|PLASTIC 同步静态存储器| 16KX36 |的CMOS | QFP封装| 144Pin支持|塑料
|
Cypress Semiconductor, Corp.
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
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GSI Technology, Inc.
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